Adsorption structures of Te on Si(001) surface observed by low energy electron diffraction

被引：14
|
作者：
Tamiya, K [1 ]
Ohtani, T [1 ]
Takeda, Y [1 ]
Urano, T [1 ]
Hongo, S [1 ]
机构：
[1] Kobe Univ, Fac Engn, Nada Ku, Kobe, Hyogo 657, Japan
来源：
SURFACE SCIENCE | 1998年 / 408卷 / 1-3期
关键词：
Auger electron spectroscopy (AES); low energy electron diffraction (LEED); metal-semiconductor interfaces; Si(001) surface; tellurium; thermal desorption spectroscopy (TDS); vicinal single crystal surfaces;
D O I：
10.1016/S0039-6028(98)00250-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Adsorption structures of Te on a Si(001) surface have been investigated by low energy electron diffraction (LEED), thermal desorption spectroscopy and Auger electron spectroscopy. After the deposition of Te atoms > 3 monolayer (ML) on a single-domain Si(001)-(1 x 2) surface at room temperature, a LEED pattern corresponding to a (10 (1) over bar 0) surface of Te bulk crystal appeared. Raising the substrate temperature, Te atoms in excess of 1 ML desorbed at about 350 degrees C and a (1 x 1)structure appeared. Furthermore, (2 x 1) and (1 x 3) structures appeared at about 600 and 680 degrees C, and amounts of Te atoms in these structures were about 1 and 2/3 ML, respectively. Finally, Te atoms desorbed at about 800 degrees C completely. (C) 1998 Elsevier Science B.V. All rights reserved.
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页码：268 / 274
页数：7
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