Transformations in Submonolayer Coverages of Chromium and Titanium on Si (001) Surface

被引：0
|
作者：
Butariev, K. O. [1 ]
Koval, I. F. [1 ]
Len, Yu. A. [1 ]
Nakhodkin, M. G. [1 ]
机构：
[1] Taras Shevchenko Natl Univ Kyiv, 64 Volodymyrska Str, UA-01601 Kiev, Ukraine
来源：
JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2013年 / 5卷 / 01期
关键词：
Transition metal; Silicide; Oxidation; Silicon;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this article the structure Si (001) surface covered by the pre-adsorbed (similar to 1-3 nm) of Ti and Cr at room temperature after annealing at 450 degrees C was studied. It was found that after annealing on silicon surface formed island coverage. The investigation of stoichiometry shows that island's composed of disilicide structure.
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页数：4
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