Stretchable Organic Thin-Film Transistors Fabricated on Wavy-Dimensional Elastomer Substrates Using Stiff-Island Structures

被引：30

作者：

Choi, Jeong-Seon ^{[1
,2
]}

Park, Chan Woo ^{[1
]}

Na, Bock Soon ^{[1
]}

Lim, Sang Chul ^{[1
]}

Lee, Sang Seok ^{[1
]}

Cho, Kyoung-Ik ^{[1
]}

Chu, Hye Yong ^{[1
]}

Koo, Jae Bon ^{[1
]}

Jung, Soon-Won ^{[1
]}

Yoon, Sung-Min ^{[2
]}

机构：

[1] Elect & Telecommun Res Inst, Components & Mat Res Lab, Taejon 305700, South Korea

[2] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Gyeonggi Do 446701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 07期

关键词：

Stretchable electronics; organic thin-film transistor (OTFT); solution process; polydimethysiloxane elastomer; wavy-dimensional structure;

D O I：

10.1109/LED.2014.2324559

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stretchable organic thin-film transistors (OTFTs) were fabricated on the polydimethysiloxane (PDMS) elastomer substrates by employing the wavy-dimensional and polyimide stiff-island structures. A low-temperature solution process was also designed to obtain high strain profiles. The endurable maximum strains were estimated to be 2.28, 9.70, and 9.32% for the OTFTs formed on the flat, 1D-, and 2D-wavy PDMS elastomers, respectively. The field-effect mobilities were obtained to be 5 similar to 7 x 10(-4) cm(2) V-1 s(-1) for all devices and they did not exhibit any degradation under the stretchable conditions before the fracture. The results suggest that the proposed methodologies were quite suitable for high-performance stretchable OTFTs.

引用

页码：762 / 764

页数：3

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