Bending effect of organic thin film transistors fabricated on plastic substrates

被引：0

作者：

Shen, Yu-Yuan ^{[1
]}

Wang, Yi-Kai ^{[1
]}

Kao, Chia-Chun ^{[1
]}

Ho, Jia-Chong ^{[1
]}

Chou, Hseih-Tao ^{[2
]}

机构：

[1] Ind Technol Res Inst, Display Technol Ctr, Organ Proc Dept, Hsinchu 310, Taiwan

[2] Natl Yunlin Univ Sci & Technol, Inst Elect & Informat Engn, Touliu 640, Taiwan

来源：

IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated pentacene-based organic thin film transistors on polyethersulphone substrates. The flexible transistor with polyimide gate dielectric layer attains the mobility of 5x10(-2) cm(2)/V s and on/off ratio of 106. Furthermore, the transistors were bent with different bending radii. The results presented a mobility decrease of over 80% of 2.5 mm radius in both outward and inward bending. We observed the distinct cracks on surface of pentacene thin films from SEM images.

引用

页码：485 / +

页数：2

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