Changes in the Activation Energy of Radiation Defects in Strongly Defected Silicon Depending on the Type and Concentration of Dopant

被引：0

作者：

Wegierek, P. ^{[1
]}

Billewicz, P. ^{[1
]}

机构：

[1] Lublin Univ Technol, PL-20618 Lublin, Poland

来源：

ACTA PHYSICA POLONICA A | 2014年 / 125卷 / 06期

关键词：

DIELECTRIC-PROPERTIES; HOPPING CONDUCTIVITY; ELECTRIC CONDUCTION; JUMP MECHANISM; H+ IONS; NEUTRONS;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The article presents the outcome of the research on alternating-current electric conduction in silicon doped with boron, phosphorus, and antimony of resistivities rho = 0.01 Omega cm and rho = 10 Omega cm, strongly defected by the implantation of Ne+ ions (D = 1.5 x 10(14) cm(-2), E = 100 keV). On the basis of results obtained for samples annealed at the temperature T-a = 598 K and measured at the testing temperature T-p = 298 K and frequency f = 1 MHz it was possible to carry out an analysis of mechanisms of electric conduction depending on the type and concentration of dopant. Obtained results confirmed the occurrence of hopping conductivity mechanism in strongly defected semiconductors, which is typical for high frequency values.

引用

页码：1392 / 1395

页数：4

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