RADIATION DEFECTS IN STRONGLY IRRADIATED P-TYPE GaAs CRYSTALS.

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Brailovskii, E.Yu.
Brudnyi, V.N.
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Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1974年 / 8卷 / 05期
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Study of investigating radiation defects in Zn-doped p-type GaAs crystals bombarded by electrons in large doses using an electron current of 1 mu A/cm**2 density and of 1. 6 - 1. 8 Mev energy at 80C was carried out determining the electrical conductivity, Hall coefficient and thermally stimulated conductivity at 20C.
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页码：619 / 620
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