DEFECTS IN THE STRUCTURE OF IRRADIATED GaAs SINGLE CRYSTALS.

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作者：
Markov, A.V.
Kolin, N.G.
Osvenskii, V.B.
Solov'ev, S.P.
Kharchenko, V.A.
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Physics and chemistry of materials treatment | 1985年 / 19卷 / 01期
关键词：
ELECTRONS; -; ETCHING; NEUTRONS;
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摘要：
The methods of 'conventional' and 'projection' selective chemical etching are used to examine the structure of single crystals of GaAs irradiated with fast electrons and neutrons with various energy spectra. Two types of microdefects differing from growth microdefects were detected: the first type of defect forms in irradiation with the fast neutrons, the second type forms in the course of annealing the neutron-irradiated specimens at high temperatures.
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