Fabrication and properties of an n-ZnO:Ga/p-GaN:Mg/α-Al2O3 heterojunction

被引：5
|
作者：
Ataev, BM
Alivov, YI
Mamedov, VV
Makhmudov, SS
Magomedov, BA
机构：
[1] Russian Acad Sci, Inst Phys, Dagestan Sci Ctr, Makhachkala 367003, Russia
[2] Russian Acad Sci, Inst Problems Microelect Technol & Ultrapure Mat, Chernogolovka 142432, Moscow Oblast, Russia
来源：
SEMICONDUCTORS | 2004年 / 38卷 / 06期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1766370
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The first results of growing ZnO/GaN/alpha-Al2O3 heteroepitaxial structures in a low-pressure flow-through reactor using chemical-vapor deposition and stimulation with a plasma of radio-frequency discharge are reported. Activation of reactants in the course of growth made it possible to significantly increase the effective pressure of atomic oxygen in the reactor, considerably reduce the temperature of epitaxy, improve the morphological and structural parameters of ZnO layers, and form a n-ZnO:Ga/p-GaN:Mg/alpha-Al2O3 heterojunction. (C) 2004 MAIK "Nauka/Interperiodica".
引用
收藏
页码：672 / 674
页数：3
相关论文
共 50 条
  • [41] Defect-assisted tuning of electroluminescence from p-GaN/n-ZnO nanorod heterojunction
    Vikas, Lawrence S.
    Sruthi, C. K.
    Jayaraj, Madambi K.
    BULLETIN OF MATERIALS SCIENCE, 2015, 38 (04) : 901 - 907
  • [42] High Spectrum Selectivity Ultraviolet Photodetector Fabricated from an n-ZnO/p-GaN Heterojunction
    Zhu, H.
    Shan, C. X.
    Yao, B.
    Li, B. H.
    Zhang, J. Y.
    Zhao, D. X.
    Shen, D. Z.
    Fan, X. W.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (51): : 20546 - 20548
  • [43] Defect-assisted tuning of electroluminescence from p-GaN/n-ZnO nanorod heterojunction
    LAWRENCE S VIKAS
    C K SRUTHI
    MADAMBI K JAYARAJ
    Bulletin of Materials Science, 2015, 38 : 901 - 907
  • [44] Fabrication and Characterization of n-ZnO Nanonails Array/p+-GaN Heterojunction Diode
    Zhu, G. Y.
    Chen, G. F.
    Li, J. T.
    Shi, Z. L.
    Lin, Y.
    Ding, T.
    Xu, X. Y.
    Dai, J.
    Xu, C. X.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (10) : 7950 - 7953
  • [45] n-ZnO/p-GaN异质结界面工程
    曾兆权
    杜小龙
    刘玉资
    英敏菊
    梅增霞
    郑浩
    袁洪涛
    郭丽伟
    贾金锋
    薛其坤
    张泽
    电子显微学报, 2005, (04) : 340 - 341
  • [46] Electroluminescence from a n-ZnO/p-GaN hybrid LED
    Behrends, Arne
    Bakin, Andrey
    Waag, Andreas
    Kwack, Ho-Sang
    Dang, Le Si
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 6, 2010, 7 (06): : 1709 - 1711
  • [47] Tailoring of electroluminescence from n-ZnO/p-GaN heterojunctions
    Huo, C. Q.
    Zeng, H.
    Cao, P. J.
    Han, S.
    Liu, W. J.
    Jia, F.
    Zeng, Y. X.
    Liu, X. K.
    Lu, Y. M.
    Zhu, D. L.
    JOURNAL OF LUMINESCENCE, 2018, 198 : 400 - 404
  • [48] Electroluminescence from n-ZnO microdisks/p-GaN heterostructure
    Turko, B.
    Nikolenko, A.
    Sadovyi, B.
    Toporovska, L.
    Rudko, M.
    Kapustianyk, V.
    Strelchuk, V.
    Panasyuk, M.
    Serkiz, R.
    Demchenko, P.
    OPTICAL AND QUANTUM ELECTRONICS, 2019, 51 (05)
  • [49] Electroluminescence from n-ZnO microdisks/p-GaN heterostructure
    B. Turko
    A. Nikolenko
    B. Sadovyi
    L. Toporovska
    M. Rudko
    V. Kapustianyk
    V. Strelchuk
    M. Panasyuk
    R. Serkiz
    P. Demchenko
    Optical and Quantum Electronics, 2019, 51
  • [50] Enhanced performance characteristics of n-ZnO/p-GaN heterojunction light-emitting diodes by forming excellent Ohmic contact to p-GaN
    Jeong, Seonghoon
    Kim, Hyunsoo
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 39 : 771 - 774
12345