Fabrication and properties of an n-ZnO:Ga/p-GaN:Mg/α-Al2O3 heterojunction

被引：5
|
作者：
Ataev, BM
Alivov, YI
Mamedov, VV
Makhmudov, SS
Magomedov, BA
机构：
[1] Russian Acad Sci, Inst Phys, Dagestan Sci Ctr, Makhachkala 367003, Russia
[2] Russian Acad Sci, Inst Problems Microelect Technol & Ultrapure Mat, Chernogolovka 142432, Moscow Oblast, Russia
来源：
SEMICONDUCTORS | 2004年 / 38卷 / 06期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1766370
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The first results of growing ZnO/GaN/alpha-Al2O3 heteroepitaxial structures in a low-pressure flow-through reactor using chemical-vapor deposition and stimulation with a plasma of radio-frequency discharge are reported. Activation of reactants in the course of growth made it possible to significantly increase the effective pressure of atomic oxygen in the reactor, considerably reduce the temperature of epitaxy, improve the morphological and structural parameters of ZnO layers, and form a n-ZnO:Ga/p-GaN:Mg/alpha-Al2O3 heterojunction. (C) 2004 MAIK "Nauka/Interperiodica".
引用
收藏
页码：672 / 674
页数：3
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