Quantum-Dot Electroluminescence Devices with C60-Doped Hole Transport Layer

被引：0
|
作者：
Shen Xing-Chao [1 ]
Yang Bo-Ping [1 ]
Zhang Hui-Chao [1 ]
Yu Yong-Ya [1 ]
Cui Yi-Ping [1 ]
Zhang Jia-Yu [1 ]
机构：
[1] Southeast Univ, Sch Elect Sci & Engn, Adv Photon Ctr, Nanjing 210096, Jiangsu, Peoples R China
来源：
CHINESE JOURNAL OF INORGANIC CHEMISTRY | 2014年 / 30卷 / 06期
关键词：
fullerene; poly(9-vinylcarbazole); quantum dot light-emitting device; PHOTOINDUCED ELECTRON-TRANSFER; LIGHT-EMITTING DEVICES; ENERGY-TRANSFER; INJECTION; POLYMER;
D O I：
暂无
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
The effect of fullerene (C-60) doping in poly (9-vinylcarbazole) (PVK) on the electroluminescent (EL) properties of quantum dot light-emitting devices was investigated by changing the C-60 content from 0wt% to 10wt%. The surface roughness of pure PVK film on ITO substrate was 3 nm, while that of C-60 doped PVK film was only 1.6 nm. The doping of C-60 in PVK could result in efficient hole injection and transport, and thus the balance of charge carriers and the EL efficiency were improved.
引用
收藏
页码：1273 / 1277
页数：5
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