Quantum-Dot Electroluminescence Devices with C60-Doped Hole Transport Layer

被引：0

作者：

Shen Xing-Chao ^{[1
]}

Yang Bo-Ping ^{[1
]}

Zhang Hui-Chao ^{[1
]}

Yu Yong-Ya ^{[1
]}

Cui Yi-Ping ^{[1
]}

Zhang Jia-Yu ^{[1
]}

机构：

[1] Southeast Univ, Sch Elect Sci & Engn, Adv Photon Ctr, Nanjing 210096, Jiangsu, Peoples R China

来源：

CHINESE JOURNAL OF INORGANIC CHEMISTRY | 2014年 / 30卷 / 06期

关键词：

fullerene; poly(9-vinylcarbazole); quantum dot light-emitting device; PHOTOINDUCED ELECTRON-TRANSFER; LIGHT-EMITTING DEVICES; ENERGY-TRANSFER; INJECTION; POLYMER;

D O I：

暂无

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The effect of fullerene (C-60) doping in poly (9-vinylcarbazole) (PVK) on the electroluminescent (EL) properties of quantum dot light-emitting devices was investigated by changing the C-60 content from 0wt% to 10wt%. The surface roughness of pure PVK film on ITO substrate was 3 nm, while that of C-60 doped PVK film was only 1.6 nm. The doping of C-60 in PVK could result in efficient hole injection and transport, and thus the balance of charge carriers and the EL efficiency were improved.

引用

页码：1273 / 1277

页数：5