Rigorous channel temperature analysis verified for InAlN/AlN/GaN HEMT

被引：9

作者：

Florovic, M. ^{[1
]}

Szobolovszky, R. ^{[1
]}

Kovac, J., Jr. ^{[1
]}

Chvala, A. ^{[1
]}

Jacquet, J-C ^{[2
]}

Delage, S. L. ^{[2
]}

机构：

[1] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Inst Elect & Photon, Ilkovicova 3, Bratislava 81219, Slovakia

[2] III V Lab, Route Nozay, F-91460 Marcoussis, France

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2019年 / 34卷 / 06期

基金：

欧盟地平线“2020”;

关键词：

InAlN; GaN; FET; HEMT; temperature profile; dissipated power; ALGAN/GAN HEMTS;

D O I：

10.1088/1361-6641/ab1737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a novel method of average channel temperature and channel temperature profile determination is discussed in theoretical part and subsequently applied to InAlN/AlN/GaN HEMT using quasi-static I-V characterization supported by thermal 3D ELM simulations. Experimentally was determined HEMT source resistance and threshold voltage from low-power output and transfer I-V characteristics at different thermal chuck temperatures. The HEMT channel average temperature nearly 88 degrees C for dissipated power 2 W was calculated taking advantage of the drain current change analysis applied in recurrent differential form. Additionally, the HEMT channel temperature profile was simulated utilizing the calculated channel dissipated power density.

引用

页数：7

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