g-factor anisotropy in nanowire-based InAs quantum dots

被引：9
|
作者：
d'Hollosy, Samuel [1 ]
Fabian, Gabor [1 ]
Baumgartner, Andreas [1 ]
Nygard, Jesper [2 ]
Schonenberger, Christian [1 ]
机构：
[1] Univ Basel, Dept Phys, Klingelbergstr 82, CH-4056 Basel, Switzerland
[2] Univ Copenhagen, Niels Bohr Inst, DK-2100 Copenhagen, Denmark
来源：
PHYSICS OF SEMICONDUCTORS | 2013年 / 1566卷
关键词：
InAs nanowires; g-factor; Kondo effect;
D O I：
10.1063/1.4848434
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The determination and control of the electron g-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the g-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the g-factor from the splitting of Kondo resonances and find that it varies continuously in the range between vertical bar g*vertical bar = 5 and 15.
引用
收藏
页码：359 / +
页数：2
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