g-factor anisotropy in nanowire-based InAs quantum dots

被引：9

作者：

d'Hollosy, Samuel ^{[1
]}

Fabian, Gabor ^{[1
]}

Baumgartner, Andreas ^{[1
]}

Nygard, Jesper ^{[2
]}

Schonenberger, Christian ^{[1
]}

机构：

[1] Univ Basel, Dept Phys, Klingelbergstr 82, CH-4056 Basel, Switzerland

[2] Univ Copenhagen, Niels Bohr Inst, DK-2100 Copenhagen, Denmark

来源：

PHYSICS OF SEMICONDUCTORS | 2013年 / 1566卷

关键词：

InAs nanowires; g-factor; Kondo effect;

D O I：

10.1063/1.4848434

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The determination and control of the electron g-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the g-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the g-factor from the splitting of Kondo resonances and find that it varies continuously in the range between vertical bar g*vertical bar = 5 and 15.

引用

页码：359 / +

页数：2

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