High-frequency impedance of semiconductor superlattice elements in external resonance system

被引：0
|
作者：
Makarov, V. V. [1 ,2 ]
Maksimenko, V. A. [1 ,2 ]
Koronovskii, A. A. [1 ,2 ]
Skvortsova, Yu. M. [1 ]
Hramov, A. E. [1 ,2 ]
机构：
[1] Yury Gagarin State Tech Univ Saratov, Saratov 410054, Russia
[2] Saratov NG Chernyshevskii State Univ, Saratov 410012, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2015年 / 41卷 / 12期
基金：
俄罗斯科学基金会;
关键词：
Technical Physic Letter; External Signal; Bias Voltage Versus; Synchronous State; Semiconductor Superlattice;
D O I：
10.1134/S106378501512024X
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the high-frequency (HF) impedance of a semiconductor superlattice coupled to an external electrodynamic system, which is a promising element of devices for terahertz (THz) and sub-THz frequency ranges. A characteristic behavior of the impedance under the action of an external harmonic HF signal in the region of synchronization at the fundamental and high-order resonance frequencies of the domain transport system is determined. It is shown that the diagnostics of synchronous regimes in a semiconductor superlattice in an external resonator can be based on analysis of the dynamics of amplitude and phase of the HF impedance.
引用
收藏
页码：1181 / 1184
页数：4
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