High-frequency impedance of semiconductor superlattice elements in external resonance system

被引：0
|
作者：
V. V. Makarov
V. A. Maksimenko
A. A. Koronovskii
Yu. M. Skvortsova
A. E. Hramov
机构：
[1] Yury Gagarin State Technical University of Saratov,
[2] Saratov State University,undefined
来源：
Technical Physics Letters | 2015年 / 41卷
关键词：
Technical Physic Letter; External Signal; Bias Voltage Versus; Synchronous State; Semiconductor Superlattice;
D O I：
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中图分类号：
学科分类号：
摘要：
We have studied the high-frequency (HF) impedance of a semiconductor superlattice coupled to an external electrodynamic system, which is a promising element of devices for terahertz (THz) and sub-THz frequency ranges. A characteristic behavior of the impedance under the action of an external harmonic HF signal in the region of synchronization at the fundamental and high-order resonance frequencies of the domain transport system is determined. It is shown that the diagnostics of synchronous regimes in a semiconductor superlattice in an external resonator can be based on analysis of the dynamics of amplitude and phase of the HF impedance.
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页码：1181 / 1184
页数：3
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