The effect of collector doping on the high-frequency generation in strongly coupled semiconductor superlattice

被引：6

作者：

Maksimenko, V. A. ^{[1
,2
]}

Makarov, V. V. ^{[1
,2
]}

Koronovskii, A. A. ^{[1
,2
]}

Alekseev, K. N. ^{[3
]}

Balanov, A. G. ^{[3
]}

Hramov, A. E. ^{[1
,2
]}

机构：

[1] Saratov State Tech Univ, REC Nonlinear Dynam Complex Syst, Saratov 410028, Russia

[2] Saratov NG Chernyshevskii State Univ, Fac Nonlinear Proc, Saratov 410012, Russia

[3] Univ Loughborough, Dept Phys, Loughborough LE11 3TU, Leics, England

来源：

EPL | 2015年 / 109卷 / 04期

关键词：

INP GUNN DEVICES;

D O I：

10.1209/0295-5075/109/47007

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This letter focuses on the analysis of the spatio-temporal dynamics of charge domains in strongly coupled semiconductor superlattices with the Ohmic emitter and collector contacts. Our numerical simulations, based on the semiclassical approximation of the electron transport, show that the collector doping can dramatically affect the charge dynamics in the semiconductor structure and, therefore, the output AC power. We demonstrate that the appropriately chosen doping of the collector contacts can considerably increase the power of the generated signal. Copyright (C) EPLA, 2015

引用

页数：5

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