NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor

被引：3

作者：

Zhou, Huimei ^{[1
]}

Wang, Miaomiao ^{[1
]}

Zhang, Jingyun ^{[1
]}

Watanabe, Koji ^{[1
]}

Durfee, Curtis ^{[1
]}

Mochizuki, Shogo ^{[1
]}

Bao, Ruqiang ^{[1
]}

Southwick, Richard ^{[1
]}

Bhuiyan, Maruf ^{[1
]}

Veeraraghavan, Basker ^{[1
]}

机构：

[1] Albany Nanotech, IBM Res Div, Albany, NY 12203 USA

来源：

2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2020年

关键词：

GAA; Nanosheet (NS); NBTI; Surface orientation; BIAS TEMPERATURE INSTABILITY;

D O I：

10.1109/irps45951.2020.9129023

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a thorough study of the negative bias temperature instability (NBTI) reliability in stacked gate-all-around (GAA) nanosheet (NS) devices with (100) and (110) top surfaces. We demonstrated that NBTI stresses not only create more permanent defects in (110) than (100) surface due to higher density of Si-H bond but also induce more recoverable damages. Finally, we show that NBTI deteriorates at narrow sheet width in (100) NS but is width independent in (110) NS.

引用

页数：6

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