Electrical levels of defect investigation of ZrO2 thin film by spectroscopic ellipsometry

被引:10
|
作者
Chen, Y. R. [1 ]
Zhou, P. [2 ]
Li, J. [1 ]
Chen, L. Y. [1 ]
机构
[1] Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China
[2] Fudan Univ, Sch Microelect, ASIC & Syst State Key Lab, Shanghai 200433, Peoples R China
来源
关键词
conduction bands; density functional theory; electron traps; ellipsometry; high-k dielectric thin films; interstitials; vacancies (crystal); X-ray diffraction; X-ray photoelectron spectra; zirconium compounds; GATE DIELECTRICS; HFO2; SI;
D O I
10.1116/1.3112652
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The electrical levels of defects of high-k dielectric ZrO2 films deposited with different oxygen fluxes have been investigated using x-ray diffraction, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry. Various defects with the formation of interstitial oxygen and oxygen vacancies existed in monoclinic ZrO2 films. The optical properties of the films are strongly influenced by configuration changes in defects. Parameters were extracted from spectroscopic ellipsometry raw data by Lorentz oscillator model fitting that indicate the probabilities and transition energies for different charged oxygen interstitial and vacancy defects. These correspond to the electron affinity energies calculated by density functional theory and assigned to electrons trapped at different charged defects from the bottom of the conduction band. A nondestructive and noncontact solution is suggested for detecting the defect states and energy level of high-k film.
引用
收藏
页码:1030 / 1034
页数:5
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