4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts

被引：33
|
作者：
Perrone, D. [1 ,2 ]
Naretto, M. [1 ,2 ]
Ferrero, S. [1 ]
Scaltrito, L. [1 ]
Pirri, C. F. [1 ]
机构：
[1] Politecn Torino, Dept Phys, IT-10129 Turin, Italy
[2] Mat & Microsyst Lab, IT-10034 Chivasso, To, Italy
来源：
SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷
关键词：
4H-SiC power devices; Schottky diodes; Schottky barrier height; electrical characterization;
D O I：
10.4028/www.scientific.net/MSF.615-617.647
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied different Schottky and ohmic contacts oil 4H-SiC with the aim to obtain Schottky barrier diodes (SBDs) capable to operate at high temperatures, frequencies and power densities for long periods of time, and showing low power losses. The control of the Schottky barrier plays ail important role in minimizing the power loss of a SBD, and the metal-semiconductor, interface properties strongly affect the overall performances of such a device. Schottky contacts were deposited using Ni, Ti. Ti/Al, Mo and Mo/Al layers, and the annealing treatments have been performed up to 600 degrees C using a rapid thermal annealing process (RTA). Ohmic contacts have been deposited on the wafer backside using Ti/Al or Ti/Ni/Ag layers. The Schottky diodes have been characterized by means of standard current-voltage (I-V) and capacitance-voltage (C-V) techniques. Schottky diodes with Mo and Mo/Al barriers show a lower barrier height and better overall performances in forward polarization when compared to the Ti- and Ni-based contacts.
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页码：647 / 650
页数：4
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