Schottky contacts to n-type 4H-SiC fabricated with Ti-, Mo-, Ni- and Al-based metallizations

被引：0
|
作者：
Perrone, D. [1 ,2 ]
Ferrero, S. [2 ,3 ]
Scaltrito, L. [2 ,3 ]
Naretto, M. [2 ,3 ]
Celasco, E. [2 ,3 ]
Pirri, C. F. [2 ,3 ]
机构：
[1] Politecn Torino, Dept Phys, Cso Duca degli Abruzzi 24, IT-10129 Turin, Italy
[2] Politecn Torino, Mat & Microsyst Lab, IT-10129 Turin, Italy
[3] Politecn Torino, Mat Sci & Chem Engn Dept, I-10129 Turin, Italy
来源：
SILICON CARBIDE AND RELATED MATERIALS 2010 | 2011年 / 679-680卷
关键词：
4H-SiC power devices; Schottky diodes; Junction Barrier Schottky diodes; Schottky Barrier Height; Electrical characterization;
D O I：
10.4028/www.scientific.net/MSF.679-680.453
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work we studied different Schottky contacts to 4H-SiC with the aim to obtain Schottky Barrier diodes (SBDs) and Junction Barrier Schottky diodes (JBS) able to operate at high temperatures, frequencies and power densities with low power losses. Schottky contacts were fabricated using Mo and Mo/Al layers annealed up to 600 C using a Rapid Thermal Process (RTP). A comparison with previous results obtained with Ni, Ti and Ti/Al layers annealed up to 400 degrees C is also proposed. The Schottky contacts were characterized by means of standard Current-Voltage (I-V) and Capacitance-Voltage (C-V) techniques. X-ray Photoelectron Spectroscopy (XPS) analyses were performed in depth profile mode in order to study the structural evolution of the interface Mo/SiC and Al/Mo during annealing treatments. Mo/Al contacts show a lower barrier height and better overall performances in forward polarization when compared to the Ti- and Ni-based contacts, and they are very promising for Schottky contact fabrication on SBD and JBS.
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页码：453 / +
页数：2
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