Schottky contacts to n-type 4H-SiC fabricated with Ti-, Mo-, Ni- and Al-based metallizations

被引：0

作者：

Perrone, D. ^{[1
,2
]}

Ferrero, S. ^{[2
,3
]}

Scaltrito, L. ^{[2
,3
]}

Naretto, M. ^{[2
,3
]}

Celasco, E. ^{[2
,3
]}

Pirri, C. F. ^{[2
,3
]}

机构：

[1] Politecn Torino, Dept Phys, Cso Duca degli Abruzzi 24, IT-10129 Turin, Italy

[2] Politecn Torino, Mat & Microsyst Lab, IT-10129 Turin, Italy

[3] Politecn Torino, Mat Sci & Chem Engn Dept, I-10129 Turin, Italy

来源：

SILICON CARBIDE AND RELATED MATERIALS 2010 | 2011年 / 679-680卷

关键词：

4H-SiC power devices; Schottky diodes; Junction Barrier Schottky diodes; Schottky Barrier Height; Electrical characterization;

D O I：

10.4028/www.scientific.net/MSF.679-680.453

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work we studied different Schottky contacts to 4H-SiC with the aim to obtain Schottky Barrier diodes (SBDs) and Junction Barrier Schottky diodes (JBS) able to operate at high temperatures, frequencies and power densities with low power losses. Schottky contacts were fabricated using Mo and Mo/Al layers annealed up to 600 C using a Rapid Thermal Process (RTP). A comparison with previous results obtained with Ni, Ti and Ti/Al layers annealed up to 400 degrees C is also proposed. The Schottky contacts were characterized by means of standard Current-Voltage (I-V) and Capacitance-Voltage (C-V) techniques. X-ray Photoelectron Spectroscopy (XPS) analyses were performed in depth profile mode in order to study the structural evolution of the interface Mo/SiC and Al/Mo during annealing treatments. Mo/Al contacts show a lower barrier height and better overall performances in forward polarization when compared to the Ti- and Ni-based contacts, and they are very promising for Schottky contact fabrication on SBD and JBS.

引用

下载

页码：453 / +

页数：2

共 50 条

[31] Influence of annealing temperature on the electrical and structural properties of palladium Schottky contacts on n-type 4H-SiC
Ramesha, C. K.
Reddy, V. Rajagopal
SUPERLATTICES AND MICROSTRUCTURES, 2014, 76 : 55 - 65
[32] Thermal stability of Ni/Ti/Al ohmic contacts to p- type 4H-SiC
20150900589130
Shen, Huajun (shenhuajun@ime.ac.cn), 1600, American Institute of Physics Inc. (117):
[33] Barrier height determination for n-type 4H-SiC Schottky contacts made using various metals
Yakimova, R
Hemmingsson, C
MacMillan, MF
Yakimov, T
Janzen, E
JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (07) : 871 - 875
[34] Ni/Ti ohmic and Schottky contacts on 4H-SiC formed with a single thermal treatment
Pérez, R
Mestres, N
Tournier, D
Godignon, P
Millán, J
DIAMOND AND RELATED MATERIALS, 2005, 14 (3-7) : 1146 - 1149
[35] Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC
Yu, Hailong
Zhang, Xufang
Shen, Huajun
Tang, Yidan
Bai, Yun
Wu, Yudong
Liu, Kean
Liu, Xinyu
JOURNAL OF APPLIED PHYSICS, 2015, 117 (02)
[36] Hysteresis effect in current–voltage characteristics of Ni/n-type 4H-SiC Schottky structure
袁昊
宋庆文
韩超
汤晓燕
何晓宁
张玉明
张义门
Chinese Physics B, 2019, 28 (11) : 320 - 325
[37] THE EFFECT OF THE POST-METALLIZATION ANNEALING OF Ni/n-TYPE 4H-SiC SCHOTTKY CONTACT
Pascu, R.
Craciunoiu, F.
Kusko, M.
Draghici, F.
Dinescu, A.
Danila, M.
2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2012, 2 : 457 - 460
[38] Effects of interfacial reactions on electrical properties of Ni ohmic contacts on n-type 4H-SiC
Han, SY
Kim, NK
Kim, ED
Lee, JL
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 897 - 900
[39] IrO2 Schottky contact on n-type 4H-SiC
Han, SY
Jang, HW
Lee, JL
APPLIED PHYSICS LETTERS, 2003, 82 (26) : 4726 - 4728
[40] Characteristics of Ni-based ohmic contacts on n-type 4H-SiC using different annealing methods
Zhou, Ziwei
He, Weiwei
Zhang, Zhenzhong
Sun, Jun
Schoner, Adolf
Zheng, Zedong
NANOTECHNOLOGY AND PRECISION ENGINEERING, 2021, 4 (01)

← 1 2 3 4 5 →