Lithium storage performance of copper nitride films deposited by reactive DC magnetron sputtering

被引：7
|
作者：
Suwannatus, Suchat [1 ]
Duangsawat, Boonchai [2 ]
Pakdee, Udomdej [3 ]
机构：
[1] Kasetsart Univ, Dept Phys, Fac Sci, Bangkok 10900, Thailand
[2] Rajamangala Univ Technol Krungthep, Fac Sci & Technol, Dept Sci, Div Chem, Bangkok 10120, Thailand
[3] Rajamangala Univ Technol Krungthep, Fac Sci & Technol, Div Phys, Dept Sci, Bangkok 10120, Thailand
来源：
MATERIALS TODAY-PROCEEDINGS | 2018年 / 5卷 / 07期
关键词：
Copper nitride film; Magnetron sputtering; Lithium ion storage; CU3N THIN-FILMS; BATTERIES; GROWTH;
D O I：
10.1016/j.matpr.2018.04.084
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Copper nitride (Cu3N) films were deposited on copper foil substrates by reactive direct current (DC) unbalance magnetron sputtering. The Cu3N films with DC sputtering powers of 110, 205, 280 and 373 W under the mixture of argon (Ar) and nitrogen (N-2) gases were investigated. The dependence of crystalline structure and film thickness of Cu3N on the sputtering powers was evaluated. Exclusively, the electrochemical measurements of the films in 1M LiCl as electrolyte were also carried out. The good performance of lithium ion storage was observed. These results demonstrate that Cu3N film on copper foil could be further explored as high capacity material for flexible lithium ion battery development. (C) 2018 Elsevier Ltd. All rights reserved.
引用
收藏
页码：15208 / 15212
页数：5
相关论文
共 50 条
  • [1] Copper nitride films deposited by dc reactive magnetron sputtering
    K. Venkata Subba Reddy
    A. Sivasankar Reddy
    P. Sreedhara Reddy
    S. Uthanna
    [J]. Journal of Materials Science: Materials in Electronics, 2007, 18 : 1003 - 1008
  • [2] Copper nitride films deposited by dc reactive magnetron sputtering
    Reddy, K. Venkata Subba
    Reddy, A. Sivasankar
    Reddy, P. Sreedhara
    Uthanna, S.
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2007, 18 (10) : 1003 - 1008
  • [3] Aluminium nitride thin films deposited by DC reactive magnetron sputtering
    Dimitrova, V
    Manova, D
    Paskova, T
    Uzunov, T
    Ivanov, N
    Dechev, D
    [J]. VACUUM, 1998, 51 (02) : 161 - 164
  • [4] Addition of silver in copper nitride films deposited by reactive magnetron sputtering
    Pierson, J. F.
    Horwat, D.
    [J]. SCRIPTA MATERIALIA, 2008, 58 (07) : 568 - 570
  • [5] Silicon Nitride Thin Films Deposited by DC Pulse Reactive Magnetron Sputtering
    Zhang, Xiao-Feng
    Wen, Pei-Gang
    Yan, Yue
    [J]. SEVENTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2011, 7995
  • [6] Microstresses in molybdenum nitride thin films deposited by reactive DC magnetron sputtering
    Shen, YG
    [J]. RESIDUAL STRESSES VII, PROCEEDINGS, 2005, 490-491 : 589 - 594
  • [7] Study on copper nitride thin films prepared by reactive DC magnetron sputtering
    Li Xing-ao
    Yang Jian-Ping
    Li Yong-Tao
    Wang Li-Xia
    Wang Hai-Yun
    [J]. FUNCTIONAL AND ELECTRONIC MATERIALS, 2011, 687 : 706 - +
  • [8] GaN films deposited by DC reactive magnetron sputtering
    Song, PK
    Yoshida, E
    Sato, Y
    Kim, KH
    Shigesato, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (2A): : L164 - L166
  • [9] Electrical properties of piezoelectric aluminium nitride films deposited by reactive dc magnetron sputtering
    Elmazria, O
    Assouar, MB
    Renard, P
    Alnot, P
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 196 (02): : 416 - 421
  • [10] Studies on zirconium nitride films deposited by reactive magnetron sputtering
    Bhuvaneswari, HB
    Priya, IN
    Chandramani, R
    Reddy, VR
    Rao, GM
    [J]. CRYSTAL RESEARCH AND TECHNOLOGY, 2003, 38 (12) : 1047 - 1051
12345