Highly resolved maskless patterning on InP by focused ion beam enhanced wet chemical etching

被引：18
|
作者：
König, H [1 ]
Reithmaier, JP [1 ]
Forchel, A [1 ]
机构：
[1] Univ Wurzburg, D-97074 Wurzburg, Germany
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 10期
关键词：
focused ion beam; high resolution lithography; maskless patterning; inorganic positive tone resist; selective etching of InP;
D O I：
10.1143/JJAP.38.6142
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The fabrication of high resolution patterns on InP-substrates by focused ion beam implantation and selective wet chemical etching has been investigated. InP acts as positive resist for Ga+ focused ion beam exposure and development by HF. The values of contrast and sensitivity have been determined to 12 and 1.5 x 10(13) cm(-2), respectively. By this technique short period line gratings with a linewidth of 30 nm have been fabricated.
引用
收藏
页码：6142 / 6144
页数：3
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