Patterning of nanomembranes with a Focused-Ion-Beam

被引：5
|
作者：
Matovic, J. [1 ]
Kettle, J. [2 ]
Brousseau, E. [3 ]
Adamovic, N. [1 ]
机构：
[1] Inst Sensors & Actuators, Fac Elect Engn Informat Technol, Vienna, Austria
[2] Univ Manchester, Sch Elect & Elect Engn, Microelect & Nanostruct Grp, Manchester M60 1QD, Lancs, England
[3] Cardiff Univ, Mfg Engn Ctr, Cardiff CF24 3AA, S Glam, Wales
来源：
2008 26TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS | 2008年
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1109/ICMEL.2008.4559233
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A nanomembrane is a new MEMS/NEMS structural component. Most nanomembrane structures consist of a free-standing element, with a mean thickness between 5 and 30 nm. In contrast to its thickness, the lateral dimensions of a nanomembrane are in the range of 3 to 5 mm. In this paper, the fabrication of a new type of nanomembranes with a thickness of approximately 20 atomic layers and with a large area is presented. In addition, this study demonstrates that Focused-Ion Beam (FIB) can be applied successfully to the patterning of such nanomembranes.
引用
收藏
页码：103 / +
页数：2
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