Modeling the voltage nonlinearity of high-k MIM capacitors

被引：17
|
作者：
Kannadassan, D. [1 ]
Karthik, R. [1 ]
Baghini, Maryam Shojaei [2 ]
Mallick, P. S. [1 ]
机构：
[1] VIT Univ, Sch Elect Engn, Vellore 632014, Tamil Nadu, India
[2] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India
来源：
SOLID-STATE ELECTRONICS | 2014年 / 91卷
关键词：
Voltage nonlinearity; High-k dielectrics; MIM capacitor; Ionic polarization; Induced dipoles; DENSITY; AL2O3;
D O I：
10.1016/j.sse.2013.10.012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Voltage nonlinearity is a crucial performance parameter of MIM capacitors for RF, analog and mixed signal IC applications. In present work, the fabrication and characterization of anodic high-k MIM capacitors are reported in detail and modeling of nonlinearity coefficient of capacitance is developed using polarization of induced dipoles. The model agrees with experimental results for various high-k dielectric MIM capacitors. It explores the origin of nonlinearity in capacitance-voltage characteristics of MIM capacitors and also predicts the potential requirements to meet the ITRS requirements. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：112 / 117
页数：6
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