Influence of absorber copper concentration on the Cu(In,Ga)Se2/(PVD)In2S3 and Cu(In,Ga)Se2/(CBD)CdS based solar cells performance

被引：10
|
作者：
Couzinie-Devy, F. [1 ]
Barreau, N. [1 ]
Kessler, J. [1 ]
机构：
[1] Univ Nantes, CNRS, UMR 6502, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France
来源：
THIN SOLID FILMS | 2009年 / 517卷 / 07期
关键词：
Cu(In; Ga)Se-2; Indium sulphide; Buffer layer; SULFIDE BUFFER LAYERS;
D O I：
10.1016/j.tsf.2008.11.015
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The present contribution deals with the influence of the copper concentration in Cu(In,Ga)Se-2 (CIGSe) on the solar cells based on CIGSe(PVD)In2S3 and CIGSe/(CBD)CdS. We find that, depending on the buffer layer, the optimum open circuit voltage (Voc) is not reached for the same copper concentration. The values of Voc for the CIGSe/(CBD)CdS solar cells are higher when the copper content is very close to stoichiometry (25%), whereas, the Voc values for CIGSe/(PVD)In2S3 Solar cells attain their maximum for lower copper contents. On the other hand, contrary to the case of the (CBD)CdS buffer, the JSC is strongly hindered for the (PVD)In2S3 buffered cells when the copper content is lowered. The study has been made for different absorber gallium contents and the evolution is coherent with the presence of a cliff at the CIGSe/(PVD)In2S3 interface. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：2407 / 2410
页数：4
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