Comparative study of Cu(In,Ga)Se2/(PVD)In2S3 and Cu(In,Ga)Se2/(CBD)CdS heterojunction based solar cells by admittance spectroscopy, current-voltage and spectral response measurements

被引：7
|
作者：
Darga, A. [1 ]
Mencaraglia, D. [1 ]
Djebbour, Z. [1 ]
Dubois, A. Migan [1 ]
Chouffot, R. [1 ]
Serhan, J. [1 ]
Couzinie-Devy, F. [2 ]
Barreau, N. [2 ]
Kessler, J. [2 ]
机构：
[1] Univ Paris Sud, Univ Paris 06, SUPELEC, Lab Genie Elect Paris,CNRS,UMR8507, F-91192 Gif Sur Yvette, France
[2] Univ Nantes, Inst Mat Jean Rouxel IMN, CNRS, UMR 6502, F-44322 Nantes 3, France
来源：
THIN SOLID FILMS | 2009年 / 517卷 / 07期
关键词：
Cu(In; Ga)Se-2; In2S3; Buffer layers; Traps levels; Admittance spectroscopy; LAYER;
D O I：
10.1016/j.tsf.2008.11.017
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Co-evaporated Cu(In,Ga)Se-2 (CIGSe) based solar cells with Physical Vapour Deposited (PVD) Indium Sulphide (In2S3) as buffer layer have been studied by admittance spectroscopy and current-voltage characteristics measurements. The results have been compared to those obtained with a reference CBD-CdS/CIGSe device. In darkness, the OVD-In2S3 buffer layer devices exhibit higher densities of trapping defects and low values of shunt resistance. However, under illumination we have observed an important improvement of the In2S3/CIGSe electronic transport properties. This behavior seems to be linked to the presence of a metastable defect with activation energy of 0.3 eV. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：2423 / 2426
页数：4
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