Epitaxial growth of high quality InSb1-xNx by MOCVD

被引：0
|
作者：
Jin, Y. J. [1 ]
Wang, Y. [1 ]
Zhang, D. H. [1 ]
Tang, X. H. [1 ]
Zhang, B. L. [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore, Singapore
来源：
2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), VOLS 1 AND 2 | 2008年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InSb(1-x)N(x) was grown epitaxially on InSb (100) by metal-organic chemical vapor deposition. The XRD measurement showed that the full width at half maximum (FWHM) of the sample is as low as 0.04, which indicates that the film behaves very high quality. Besides, lattice mismatch between InSb(1-x)N(x) layer and InSb substrate was also detected from the XRD results, indicating that the nitrogen has been successfully incorporated into InSb. According to this mismatch, we have calculated the N content in the layer. The sample band-gap was measured by Infrared transmission. Besides, XPS was also done to measure the N content in the InSb(1-x)N(x) and a relatively weak N peak was detected in the results.
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页码：239 / 242
页数：4
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