Study of thermal effects on thin double gate SOI MOSFETs characteristics

被引：0

作者：

Gharabagi, R ^{[1
]}

机构：

[1] St Louis Univ, Dept Elect Engn, St Louis, MO 63103 USA

来源：

2004 IEEE REGION 5 CONFERENCE: ANNUAL TECHNICAL AND LEADERSHIP WORKSHOP | 2004年

关键词：

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

A quasi two dimensional model is developed for a fully depleted (FD) double gate Silicon on Insulator (SOI) Metal Oxide Semiconductor (MOS) Transistors for the strong inversion regime. Front and back gate effects are accounted for. Small geometry effects such as carrier velocity saturation, mobility degradation, and channel length modulation effects are included. Lattice and carriers are considered to be at thermal equilibrium. The thermal effects are included in carrier mobility, threshold voltage, and intrinsic concentration. IN characteristics in the saturation region include the effects of impact ionization current and parasitic bipolar transistor.

引用

页码：107 / 111

页数：5

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