Effects of Si ion implantation and post-annealing on yellow luminescence from GaN

被引：10
|
作者：
Dai, L
Zhang, JC
Chen, Y
Ran, GZ
Qin, GG [1 ]
机构：
[1] Beijing Univ, Dept Phys, Beijing 100871, Peoples R China
[2] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[3] Qu Fu Normal Univ, Dept Phys, Qu Fu 273165, Peoples R China
[4] Acad Sinica, Int Ctr Mat Phys, Shenyang 110015, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2002年 / 322卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
photoluminescence; yellow luminescence; ion implantation; GaN;
D O I：
10.1016/S0921-4526(02)00598-7
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have studied the effects of Si ion implantation and post-annealing on yellow luminescence (YL) from GaN. Two types of GaN samples grown by the metal-organic chemical vapor deposition method and labeled as GaN1 and GaN2 were studied. The PL spectrum of the as-grown GaN1 sample was dominated by a strong YL and that of the as-grown GaN2 sample was almost free from YL. After Si ion implantation with doses of both 1.3 x 10(13) and 1.0 x 10(16)cm(-2), the intensity ratios of YL to near band edge (NBE) emission (I-Y/I-NBE) for the GaN1 samples decreased markedly compared with those of the corresponding unimplanted ones both before and after post-annealing at temperatures up to 950degreesC. However, for the Si-ion-implanted GaN2 sample with a dose of 1.3 x 10(13)cm(-2), I-Y/I-NBE increased compared with that of the as-grown one both before and after post-annealing. Besides, the I-Y/I-NBE for Si-ion-implanted GaN1 with a dose of 1.3 x 10(13) cm(-2) increased monotonically with annealing temperature. Our results show that only the Si ion implantation being accompanied with high-temperature post-annealing could produce YL. The possible reasons for the marked reduction in I-Y/I-NBE for the GaN1 sample after Si-ion-implantation have been discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：51 / 56
页数：6
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