The post-annealing environment effect on the photoluminescence recovery of ion-irradiated Si nanocrystals

被引：5
|
作者：
Sias, U. S.
Behar, M.
Boudinov, H.
Moreira, E. C.
机构：
[1] Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil
[2] Ctr Fed Educ Tecnol Pelotas, BR-96015370 Pelotas, RS, Brazil
[3] Univ Fed Pelotas, UNIPAMPA, BR-96400970 Bage, RS, Brazil
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 257卷
关键词：
silicon nanocrystals; photoluminescence; hot implantation; ion irradiation;
D O I：
10.1016/j.nimb.2006.12.112
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In the present work we have investigated the influence of the post-annealing environment on the photoluminescence (PL) recovery of Si nanocrystals after ion irradiation. Samples originally produced by Si implantation into SiO2 matrix at 600 degrees C post-annealed at 1100 degrees C were further bombarded with 2 MeV Si+, at a fluence of Phi = 2 x 10(13) Si/cm(2). After irradiation the original emission, composed by two PL bands, was completely quenched. We shown that the environment of a post-annealing performed at 900 degrees C has a strong effect on the PL emission recovery. The intensity and shape of the PL spectra have revealed to be dependent of the annealing gas (N-2 or Ar), annealing time, as well as the original Si excess. The results are explained on the basis of current theories. (c) D 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：6 / 10
页数：5
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