ENHANCEMENT OF EXCITONIC PHOTOLUMINESCENCE IN SILICON-DOPED n+/i-GaAs STRUCTURES

被引：4
|
作者：
Kazlauskaite, V. [1 ]
Suziedelis, A. [1 ]
Cerskus, A. [1 ]
Gradauskas, J. [1 ]
Asmontas, S. [1 ]
Kundrotas, J. [1 ]
机构：
[1] Inst Semicond Phys, LT-01108 Vilnius, Lithuania
来源：
LITHUANIAN JOURNAL OF PHYSICS | 2009年 / 49卷 / 03期
关键词：
GaAs homojunction; photoliuminescence; exciton; GAAS; SEMICONDUCTORS; DEPENDENCE;
D O I：
10.3952/lithjphys.49307
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We present photoluminescence spectra of a molecular beam epitaxy grown GaAs structure consisting of the layer of intrinsic conductivity having 500 nm thickness and capped with silicon-doped 100 nm thick layer. The spectra were measured in the range of 3.6-77 K crystal lattice temperatures and at various laser excitation energies. Possible mechanisms of experimentally observed excitonic line narrowing and intensity enhancement in n(+)/i-GaAs homojunction are discussed.
引用
收藏
页码：285 / 290
页数：6
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