Silicon nanowires integrated with CMOS circuits for biosensing application

被引：15
|
作者：
Jayakumar, G. [1 ]
Asadollahi, A. [1 ]
Hellstrom, P. -E. [1 ]
Garidis, K. [1 ]
Ostling, M. [1 ]
机构：
[1] KTH Royal Inst Technol, Sch ICT, Kista, Sweden
来源：
SOLID-STATE ELECTRONICS | 2014年 / 98卷
基金：
欧洲研究理事会;
关键词：
Nanowire; Biosensing; SOI; CMOS; STL;
D O I：
10.1016/j.sse.2014.04.005
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We describe a silicon nanowire (SiNW) biosensor fabricated in a fully depleted SOI CMOS process. The sensor array consists of N by N pixel matrix (N-2 pixels or test sites) and 8 input-output (I/O) pins. In each pixel a single crystalline SiNW with 75 by 20 nm cross-section area is defined using sidewall transfer lithography in the SOI layer. The key advantage of the design is that each individual SiNWs can be read-out sequentially and used for real-time charge based detection of molecules in liquids or gases. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：26 / 31
页数：6
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