Silicon nanowires integrated with CMOS circuits for biosensing application

被引：15

作者：

Jayakumar, G. ^{[1
]}

Asadollahi, A. ^{[1
]}

Hellstrom, P. -E. ^{[1
]}

Garidis, K. ^{[1
]}

Ostling, M. ^{[1
]}

机构：

[1] KTH Royal Inst Technol, Sch ICT, Kista, Sweden

来源：

SOLID-STATE ELECTRONICS | 2014年 / 98卷

基金：

欧洲研究理事会;

关键词：

Nanowire; Biosensing; SOI; CMOS; STL;

D O I：

10.1016/j.sse.2014.04.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a silicon nanowire (SiNW) biosensor fabricated in a fully depleted SOI CMOS process. The sensor array consists of N by N pixel matrix (N-2 pixels or test sites) and 8 input-output (I/O) pins. In each pixel a single crystalline SiNW with 75 by 20 nm cross-section area is defined using sidewall transfer lithography in the SOI layer. The key advantage of the design is that each individual SiNWs can be read-out sequentially and used for real-time charge based detection of molecules in liquids or gases. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：26 / 31

页数：6

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