Design of Passive UHF RFID Tag in 130nm CMOS Technology

被引:10
|
作者
Hong, Yang [1 ]
Chan, Chi Fat [1 ]
Guo, Jianping [1 ]
Ng, Yuen Sum [1 ]
Shi, Weiwei [1 ]
Leung, Lai Kan [1 ]
Leung, Ka Nang [1 ]
Choy, Chiu Sing [1 ]
Pun, Kong Pang [1 ]
机构
[1] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China
关键词
D O I
10.1109/APCCAS.2008.4746284
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents a low-power, passive, UHF RFID tag design compatible with EPC (TM) C1G2 protocol. In order to reduce its cost, diode-connected NMOS in a standard CMOS technology is used instead of Schottky diodes. With the help of low-threshold-voltage, triple-well NMOS, a minimum input power of -7.6dBm is achieved. A sub-1V, low temperature-coefficient voltage reference using self-biased mutual compensation is proposed without large resistors to save the chip area. In addition, an energy-aware irregular clock structure, together with clock gating, achieves low power consumption in the baseband processor. The whole tag is implemented in a 130nm CMOS technology and the total chip area is 1200umx1220um.
引用
收藏
页码:1371 / 1374
页数:4
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