Synthesis, structure, and physical properties of boron-doped diamond

被引：7
|
作者：
Ekimov, E. A. [1 ]
Sidorov, V. A.
Rakhmanina, A. V.
Mel'nik, N. N.
Timofeev, M. A.
Sadykov, R. A.
机构：
[1] Russian Acad Sci, Vereshchagin Inst High Pressure Phys, Troitsk 142190, Moscow Oblast, Russia
[2] Russian Acad Sci, Lebedev Inst Phys, Moscow 119991, Russia
[3] Moscow MV Lomonosov State Univ, Skobeltsyn Inst Nucl Phys, Moscow 119992, Russia
来源：
INORGANIC MATERIALS | 2006年 / 42卷 / 11期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S0020168506110057
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Microcrystalline boron-doped diamond powders consisting of octahedrally faceted crystals have been synthesized in the C-H-B system at a pressure of 8 GPa and temperatures above 2000 K. The presence of boron has been shown to reduce the parameters of diamond synthesis compared to the binary system C-H (naphthalene). One possible reason for the reduction in synthesis parameters is the formation of less perfect graphite in the boron system in an intermediate step of diamond synthesis. At B/(C + B) ratios of about 5-10 at % in the C-H-B (naphthalene + boron) system, superconducting diamond microcrystals have been synthesized.
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收藏
页码：1198 / 1204
页数：7
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