Optical properties of boron-doped diamond

被引:41
|
作者
Wu, D
Ma, YC
Wang, ZL
Luo, Q
Gu, CZ
Wang, NL
Li, CY
Lu, XY
Jin, ZS
机构
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
[2] Jilin Univ, State Key Lab Superhard Mat, Changchun 130021, Peoples R China
关键词
D O I
10.1103/PhysRevB.73.012501
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report optical reflectivity study on pure and boron-doped diamond films grown by a hot-filament chemical vapor deposition method. The study reveals the formation of an impurity band close to the top of the valence band upon boron doping. A schematic picture for the evolution of the electronic structure with boron doping was drawn based on the experimental observation. The study also reveals that the boron doping induces local lattice distortion, which brings an infrared-forbidden phonon mode at 1330 cm(-1) activated in the doped sample. The antiresonance characteristic of the mode in conductivity spectrum evidences the very strong coupling between electrons and this phonon mode.
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页数:4
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