Synthesis, structure, and physical properties of boron-doped diamond

被引：7
|
作者：
Ekimov, E. A. [1 ]
Sidorov, V. A.
Rakhmanina, A. V.
Mel'nik, N. N.
Timofeev, M. A.
Sadykov, R. A.
机构：
[1] Russian Acad Sci, Vereshchagin Inst High Pressure Phys, Troitsk 142190, Moscow Oblast, Russia
[2] Russian Acad Sci, Lebedev Inst Phys, Moscow 119991, Russia
[3] Moscow MV Lomonosov State Univ, Skobeltsyn Inst Nucl Phys, Moscow 119992, Russia
来源：
INORGANIC MATERIALS | 2006年 / 42卷 / 11期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S0020168506110057
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Microcrystalline boron-doped diamond powders consisting of octahedrally faceted crystals have been synthesized in the C-H-B system at a pressure of 8 GPa and temperatures above 2000 K. The presence of boron has been shown to reduce the parameters of diamond synthesis compared to the binary system C-H (naphthalene). One possible reason for the reduction in synthesis parameters is the formation of less perfect graphite in the boron system in an intermediate step of diamond synthesis. At B/(C + B) ratios of about 5-10 at % in the C-H-B (naphthalene + boron) system, superconducting diamond microcrystals have been synthesized.
引用
收藏
页码：1198 / 1204
页数：7
相关论文
共 50 条
  • [31] Electrochemical synthesis of peroxomonophosphate using boron-doped diamond anodes
    Weiss, E.
    Saez, C.
    Groenen-Serrano, K.
    Canizares, P.
    Savall, A.
    Rodrigo, M. A.
    [J]. JOURNAL OF APPLIED ELECTROCHEMISTRY, 2008, 38 (01) : 93 - 100
  • [32] Properties of boron-doped (113) oriented homoepitaxial diamond layers
    Mortet, V.
    Taylor, A.
    Lambert, N.
    Gedeonova, Z.
    Fekete, L.
    Lorincik, J.
    Klimsa, L.
    Kopecek, J.
    Hubik, P.
    Soban, Z.
    Laposa, A.
    Davydova, M.
    Voves, J.
    Posta, A.
    Povolny, V.
    Hazdra, P.
    [J]. DIAMOND AND RELATED MATERIALS, 2021, 111
  • [33] Thermoelectric transport properties of boron-doped nanocrystalline diamond foils
    Engenhorst, Markus
    Fecher, Jonas
    Notthoff, Christian
    Schierning, Gabi
    Schmechel, Roland
    Rosiwal, Stefan M.
    [J]. CARBON, 2015, 81 : 650 - 662
  • [34] Electronic and optical properties of boron-doped nanocrystalline diamond films
    Gajewski, W.
    Achatz, P.
    Williams, O. A.
    Haenen, K.
    Bustarret, E.
    Stutzmann, M.
    Garrido, J. A.
    [J]. PHYSICAL REVIEW B, 2009, 79 (04):
  • [35] Influence of Surface Orientation on Electrochemical Properties of Boron-Doped Diamond
    Ivandini, Tribidasari A.
    Watanabe, Takeshi
    Matsui, Takahiro
    Ootani, Yusuke
    Iizuka, Shota
    Toyoshima, Ryo
    Kodama, Hideki
    Kondoh, Hiroshi
    Tateyama, Yoshitaka
    Einaga, Yasuaki
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 123 (09): : 5336 - 5344
  • [36] Origin of the metallic properties of heavily boron-doped superconducting diamond
    T. Yokoya
    T. Nakamura
    T. Matsushita
    T. Muro
    Y. Takano
    M. Nagao
    T. Takenouchi
    H. Kawarada
    T. Oguchi
    [J]. Nature, 2005, 438 : 647 - 650
  • [37] Origin of the metallic properties of heavily boron-doped superconducting diamond
    Yokoya, T
    Nakamura, T
    Matsushita, T
    Muro, T
    Takano, Y
    Nagao, M
    Takenouchi, T
    Kawarada, H
    Oguchi, T
    [J]. NATURE, 2005, 438 (7068) : 647 - 650
  • [38] Electrochemical properties and morphology of boron-doped diamond thin films
    Gwon, Jin Uk
    Jang, Tae Hwan
    Kim, Min Su
    Kim, Tae Gyu
    Bae, Mun Ki
    [J]. MODERN PHYSICS LETTERS B, 2022, 36 (16): : 1DUMMT
  • [39] Nanoscale modification of electrical properties of hydrogenated boron-doped diamond
    Andrienko, I
    Prawer, S
    Kalish, R
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (07): : 1537 - 1542
  • [40] ELECTRICAL AND PHOTOCONDUCTIVE PROPERTIES OF BORON-DOPED POLYCRYSTALLINE DIAMOND FILMS
    ZHANG, WJ
    HU, B
    XIE, EQ
    ZHANG, YF
    HAN, L
    SONG, ZZ
    CHEN, GH
    [J]. JOURNAL OF MATERIALS RESEARCH, 1995, 10 (09) : 2350 - 2354
12345