Electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum wells

被引：12

作者：

Sun, Y. ^{[1
]}

Balkan, N. ^{[1
]}

Erol, A. ^{[2
]}

Arikan, M. C. ^{[2
]}

机构：

[1] Univ Essex, Dept Comp Elect Syst, Colchester CO4 3SQ, Essex, England

[2] Istanbul Univ, Fac Sci, Dept Phys, TR-34134 Istanbul, Turkey

来源：

MICROELECTRONICS JOURNAL | 2009年 / 40卷 / 03期

关键词：

GaInNAs; Two-dimension electron gas; Mobility; DILUTE NITRIDE SEMICONDUCTORS; MOBILITY; PHOTOLUMINESCENCE; HETEROSTRUCTURES; NITROGEN;

D O I：

10.1016/j.mejo.2008.06.010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum well structures. The Hall mobility of electrons in the n-type material decreases dramatically with increasing nitrogen composition. The mobility of 2D holes in p-modulation-doped quantum wells is significantly higher than that of 2D electrons in n-modulation-doped material with similar nitrogen concentration. The mobility of 2D electrons is discussed using a S-matrix model for N-related alloy scattering. The results indicate that the electron mobility is intrinsically limited by scattering from nitrogen complexes. The high mobility of 2D holes is explained in terms of negligible effect of nitrogen on valance band and the absence of scattering with localized nitrogen complexes. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：403 / 405

页数：3

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