Mechanical spectroscopy connected to creep and stress relaxation in a high resistant silicon nitride

被引:2
|
作者
Testu, S
Schaller, R [1 ]
Besson, JL
Rouxel, T
Bernard-Granger, G
机构
[1] Ecole Polytech Fed Lausanne, Inst Genie Atom, CH-1015 Lausanne, Switzerland
[2] ENSCI, Lab Sci Procedes Ceram & Traitements Surface, CNRS, UMR 6638, F-87065 Limoges, France
[3] Univ Rennes 1, LARMAUR, F-35042 Rennes, France
[4] ZAC MIN, St Gobain Ceram & Plast, F-84306 Cavaillon, France
关键词
creep; grain boundaries; mechanical spectroscopy; Si3N4; sintering;
D O I
10.1016/S0955-2219(02)00109-7
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Silicon nitride processed by gas pressure sintering contains a very small amount of glassy phase and consequently exhibits a strong resistance to deformation until 1450 degreesC. Above this temperature, both relaxation kinetics and creep rate rapidly increase. To explain such a behaviour, the formation of a liquid phase by dissolution of YSiAlON phases was proposed. The present paper shows that mechanical spectroscopy argues for the existence of such a liquid phase at high temperature. The mechanical loss is very low in the as-sintered material. Nevertheless, the internal friction peak generally observed in silicon nitride, and attributed to the glass transition in the glassy pockets, is also observed in the gas pressure sintered silicon nitride. Moreover, the peak is much higher in annealed and "quenched" specimens and it increases with annealing time. These results show that the annealed and "quenched" material contains much more glassy phase and so argues for the dissolution of crystalline phases at high temperature. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:2511 / 2516
页数:6
相关论文
共 50 条
  • [1] Stress relaxation testing as a basis for creep analysis and design of silicon nitride
    Woodford, DA
    Wereszczak, AA
    Bakker, WT
    [J]. JOURNAL OF ENGINEERING FOR GAS TURBINES AND POWER-TRANSACTIONS OF THE ASME, 2000, 122 (02): : 206 - 211
  • [2] Stress relaxation, creep recovery, and Newtonian viscous flow in silicon nitride
    Woodford, DA
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1998, 81 (09) : 2327 - 2332
  • [3] Creep design analysis of silicon nitride using stress relaxation data
    Woodford, DA
    [J]. MATERIALS & DESIGN, 1996, 17 (03): : 127 - 132
  • [4] Compressive creep and stress relaxation kinetics in a high purity silicon nitride ceramics in the 1400-1650 °C range
    Testu, S
    Besson, JL
    Rouxel, T
    Granger, GB
    [J]. CREEP AND FRACTURE OF ENGINEERING MATERIALS AND STRUCTURES, 2000, 171-1 : 817 - 823
  • [5] Enhanced creep resistant silicon-nitride-based nanocomposite
    Dusza, J
    Kovalcík, J
    Hvizdos, P
    Sajgalík, P
    Hnatko, M
    Reece, MJ
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2005, 88 (06) : 1500 - 1503
  • [6] BEND STRESS RELAXATION CREEP OF CVD SILICON CARBIDE
    Katoh, Yutai
    Snead, Lance L.
    [J]. MECHANICAL PROPERTIES AND PERFORMANCE OF ENGINEERING CERAMICS AND COMPOSITES, 2005, 26 (02): : 265 - 272
  • [7] Creep deformation effects on the mechanical properties of a silicon nitride ceramic
    Tenore, D
    Melandri, C
    Guicciardi, S
    [J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 2000, 19 (16) : 1427 - 1429
  • [8] Creep behavior of improved high temperature silicon nitride
    Wiederhorn, SM
    Krause, RF
    Lofaj, F
    Täffner, U
    [J]. ADVANCED SI-BASED CERAMICS AND COMPOSITES, 2005, 287 : 381 - 392
  • [9] Silicon nitride and YMgSiAlON glass study by mechanical spectroscopy
    Doen, B
    Gadaud, P
    [J]. JOURNAL DE PHYSIQUE IV, 1996, 6 (C8): : 707 - 710
  • [10] Effect of temperature on the pre-creep mechanical properties of silicon nitride
    Sanchez-Gonzalez, Estibaliz
    Miranda, Pedro
    Guiberteau, Fernando
    Pajares, Antonia
    [J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2009, 29 (12) : 2635 - 2641