Product-Level Reliability Estimator with Budget-Based Reliability Management in 20nm Technology

被引:0
|
作者
Ahn, Jae-Gyung [1 ]
Lu, Ming Peng [2 ]
Navale, Nitin [1 ]
Graves, Dawn [1 ]
Yeh, Ping-Chin [1 ]
Chang, Jonathan [1 ]
Pai, S. Y. [2 ]
机构
[1] Xilinx Inc, FPGA Dev & Silicon Technol Grp, San Jose, CA 95124 USA
[2] Xilinx Inc, Reliabil Engn Grp, San Jose, CA 95124 USA
关键词
product reliability; failure rate; reliability budget; TDDB; Electromigration; MOL TDDB; HTOL;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Product-level Reliability Estimator (PLRE) has been built for 20nm technology product. With PLRE, users can estimate failure rate of the chip with various use conditions. EDA tools are used to estimate each block's reliability budget, in terms of effective area for TDDB and effective number for EM which are to be used in building PLRE. Budget-based reliability check procedure was explained, which let designers have more room for reliability to get better circuit performance. Results of PLRE show that EM and MOL TDDB can be an actual risk in specific use condition.
引用
收藏
页数:5
相关论文
共 41 条
  • [1] Product-Level Reliability Estimator with Budget-Based Reliability Management in 16nm Technology
    Ahn, Jae-Gyung
    Lu, Ming Feng
    Navale, Nitin
    Graves, Dawn
    Refai-Ahmed, Gamal
    Yeh, Ping-Chin
    Chang, Jonathan
    [J]. 2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2017,
  • [2] Product-Level Reliability Estimator with Advanced CMOS Technology
    Ahn, Jae-Gyung
    Lu, Ming Feng
    Yeh, Ping-Ching
    Chang, Jonathan
    Wu, Xin
    Pai, S. Y.
    [J]. 2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2013,
  • [3] Budget-Based Reliability Management to Handle Impact of Thermal issues in 16nm Technology
    Ahn, Jae-Gyung
    Cooksey, John
    Navale, Nitin
    Lo, Nick
    Yeh, Ping-Chin
    Chang, Jonathan
    [J]. 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016,
  • [4] Reliability Study on Technology Trends Beyond 20nm
    Amat, Esteve
    Calomarde, Antonio
    Rubio, Antonio
    [J]. MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, MIXDES 2013, 2013, : 414 - 418
  • [5] Product-level Reliability of GaN Devices
    Bahl, Sandeep R.
    Ruiz, Daniel
    Lee, Dong Seup
    [J]. 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016,
  • [6] Reliability Evaluation of an Extreme TSV Interposer and Interconnects for the 20nm Technology CoWoS IC Package
    Banijamali, Bahareh
    Lee, Tom
    Liu, Henley
    Ramalingam, Suresh
    Barber, Ivor
    Chang, Jonathan
    Kim, Myongseob
    Yip, Laurene
    [J]. 2015 IEEE 65TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2015, : 276 - 280
  • [7] Impact of 3D Via Middle TSV Process on 20nm Wafer Level FEOL and BEOL Reliability
    Premachandran, C. S.
    England, Luke
    Kannan, Sukeshwar
    Ranjan, Rakesh
    Yeap, Kong Boon
    Teo, Walter
    Cimino, Salvatore
    Jing, Tan
    Zhang, Haojun
    Smith, Daniel
    Justison, Patrick
    Parameshwaran, Biju
    Iyer, Natarajan Mahadeva
    [J]. 2016 IEEE 66TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2016, : 1593 - 1598
  • [8] TSV Integration on 20nm Logic Si: 3D Assembly and Reliability Results
    Agarwal, Rahul
    Hiner, Dave
    Kannan, Sukeshwar
    Lee, KiWook
    Kim, DoHyeong
    Paek, JongSik
    Kang, SungGeun
    Song, Yong
    Dej, Sebastian
    Smith, Dan
    Thangaraju, Sara
    Paul, Jens
    [J]. 2014 IEEE 64TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2014, : 590 - 595
  • [9] Simplified highly-accelerated life testing on components for product-level vibration reliability enhancement
    Chengalva, MK
    Webster, RA
    Packard, DG
    [J]. ITHERM 2004, VOL 2, 2004, : 231 - 237
  • [10] NBTI product level reliability for a low-power SRAM technology
    Puchner, Helmut
    [J]. MICROELECTRONICS RELIABILITY, 2007, 47 (06) : 873 - 879