Fabrication of Strained Ge on Insulator via Room Temperature Wafer Bonding

This work describes a strained germanium on insulator (GeOI) fabrication process using wafer bonding and etch-back techniques. The strained Ge layer is fabricated epitaxially using reduced pressure chemical vapor deposition (RPCVD). The strained Ge is grown pseudomorphic on top of a partially relaxed Si0.66Ge0.34 layer. Wafer bonding is performed at room temperature without post-anneal processes and the etch-back steps are performed without mechanical grinding and chemical mechanical polishing (CMP).