MBE growth of GaAs/AlGaAs quantum well on a patterned GaAs (001) substrate

被引：4

作者：

Yamaguchi, M ^{[1
]}

Nishimoto, Y ^{[1
]}

Sawaki, X ^{[1
]}

机构：

[1] Nagoya Univ, Dept Elect, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 24卷 / 1-2期

关键词：

MBE; quantum well; GaAs; inter-surface diffusion; diffusion length;

D O I：

10.1016/j.physe.2004.04.004

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A GaAs/AlGaAs quantum well (QW) was grown on a stripe-patteried (001) GaAs substrate with conventional molecular beam epitaxy. A mesa structure was formed with (001) facet on the top and (111) facet on the sides. It was found that the thickness of the QW layer on the (001) facet is controlled by the inter-surface diffusion of Ga adatoms from the (111) side facets. The behavior was investigated as a function of V/III ratio and the growth temperature. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：143 / 147

页数：5

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