GaAsBi/GaAs MQWs MBE growth on (411) GaAs substrate

被引：8
|
作者：
Patil, Pallavi Kisan [1 ]
Ishikawa, Fumitaro [1 ]
Shimomura, Satoshi [1 ]
机构：
[1] Ehime Univ, Grad Sch Sci & Engn, 3 Bunkyo Cho, Matsuyama, Ehime 7908577, Japan
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 100卷
关键词：
GaAsBi/GaAs; Multiple quantum wells; Molecular beam epitaxy; (411) GaAs substrate; X-ray diffraction and Photoluminescence; MOLECULAR-BEAM EPITAXY;
D O I：
10.1016/j.spmi.2016.11.003
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Eleven periods of GaAsBi/GaAs multiple quantum wells (MQWs) grown on (411)A and (411)B GaAs substrates at T-GaAsBi = 350 degrees C and T-GaAs = 550 degrees C by molecular beam epitaxy (MBE) and their structural and optical properties were investigated. The high resolution Xray diffraction (HRXRD) analysis shows increment in Bi composition with the increasing As-4 beam equivalent pressure (BEP). The reciprocal space mapping (RSM) reveals highly strained GaAsBi/GaAs MQWs layers can be grown without relaxation with respect to the (411) GaAs substrate on both A and B sides at an optimized growth condition of Bi and As4 BEP; while (411)A sample with higher bismuth content (5.5 %) shows lattice dislocation of MQWs due to lateral strain. The temperature-dependent photoluminescence (PL) shows 1.26 pm emission at room temperature from both the (411)A and (411)B samples for GaAs0.97Bi0.03/GaAs MQWs. It is perceived that GaAsBi/GaAs MQWS can be successfully grown on both sides of (411) GaAs substrate. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1205 / 1212
页数：8
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