Ion beam modification of plasmonic titanium nitride thin films

被引:9
|
作者
Zhang, Lin-ao [1 ]
Liu, Hao-nan [1 ]
Suo, Xiao-xia [1 ]
Tong, Shou [2 ]
Li, Ying-lan [1 ]
Jiang, Zhao-tan [1 ]
Wang, Zhi [1 ]
机构
[1] Beijing Inst Technol, Minist Educ China, Sch Phys, Key Lab Cluster Sci, Beijing 100081, Peoples R China
[2] BOE Technol Grp Co Ltd, Beijing 100081, Peoples R China
基金
中国国家自然科学基金;
关键词
OPTICAL-PROPERTIES; TIN FILMS; METAMATERIALS; DEPOSITION;
D O I
10.1007/s10853-017-0879-y
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Titanium nitride is regarded as an alternative plasmonic material for its tunability and other high performances. In this work, we prepared TiNx thin films by ion beam assisted deposition and studied the effects of assisting ion energy on the structural, electrical, optical, and plasmonic properties of the films. The results show that the bombardment of assisting ions causes higher crystallinity and higher resistivity. Both the experimental and fitting results show that assisting ions can improve the plasmonic performance of thin films. Higher E-a leads to lower carrier concentration, lower plasma frequency, and lower optical losses. With E-a increasing, the energy loss function shifts toward low photon energy. Importantly, IBAD-TiNx can serve as a promising plasmonic material in visible and near-IR region, and its plasmonic properties can be effectively tuned by assisting ions energy.
引用
下载
收藏
页码:6442 / 6448
页数:7
相关论文
共 50 条
  • [31] CHARACTERIZATION OF TITANIUM ALUMINUM NITRIDE THIN-FILMS BY ION-BEAM TECHNIQUES AND X-RAY-DIFFRACTION
    STEDILE, FC
    FREIRE, FL
    SCHREINER, WH
    BAUMVOL, IJR
    VACUUM, 1994, 45 (04) : 441 - 446
  • [32] Plasmonic performance, electrical and optical properties of titanium nitride nanostructured thin films for optoelectronic applications
    A. M. Abd El-Rahman
    S. H. Mohamed
    Mohd Taukeer Khan
    M. A. Awad
    Journal of Materials Science: Materials in Electronics, 2021, 32 : 28204 - 28213
  • [33] Controlling the plasmonic properties of titanium nitride thin films by radiofrequency substrate biasing in magnetron sputtering
    Mascaretti, Luca
    Barman, Tapan
    Bricchi, Beatrice Roberta
    Munz, Filip
    Li Bassi, Andrea
    Kment, Stepan
    Naldoni, Alberto
    APPLIED SURFACE SCIENCE, 2021, 554
  • [34] OPTICAL AND ELECTRICAL PROPERTIES OF ION IMPLANTED TITANIUM NITRIDE THIN FILMS.
    Armigliato, A.
    Celotti, G.
    Garulli, A.
    Guerri, S.
    Ostoja, P.
    Summonte, C.
    Vide, les Couches Minces, 1983, 38 (218): : 401 - 404
  • [35] Ion beam modification of structural and electrical properties of TiN thin films
    Popovic, M.
    Stojanovic, M.
    Perusko, D.
    Novakovic, M.
    Radovic, I.
    Milinovic, V.
    Timotijevic, B.
    Mitric, M.
    Milosavljevic, M.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (10): : 2507 - 2510
  • [36] Modification of CuxS thin films by low energy ion beam implantation
    Zheng, Jianbang
    Liu, Xiaozeng
    Li, Chengquan
    Cao, Meng
    Li, Ning
    Wu, Hongcai
    Bandaoti Guangdian/Semiconductor Optoelectronics, 2000, 21 (03): : 199 - 202
  • [37] Microstructural study of iron nitride thin films deposited by ion beam sputtering
    Gupta, M
    Gupta, A
    Chaudhari, SM
    Phase, DM
    Ganesan, V
    Rao, MVR
    Shripathi, T
    Dasannacharya, BA
    VACUUM, 2001, 60 (04) : 395 - 399
  • [38] DEPOSITION OF BORON NITRIDE THIN FILMS BY ION BEAM ASSISTED DEPOSITION.
    Bricault, R.J.
    Sioshansi, P.
    Bunker, S.N.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1986, B21 (2-4) : 586 - 587
  • [39] Study of Scandium Nitride Thin Films Deposited using Ion Beam Sputtering
    Chowdhury, Susmita
    Gupta, Rachana
    Prakash, Shashi
    Behera, Layanta
    Phase, D. M.
    Gupta, Mukul
    DAE SOLID STATE PHYSICS SYMPOSIUM 2019, 2020, 2265
  • [40] Aluminium nitride thin films prepared by ion beam assisted deposition method
    Watanabe, Y
    SURFACE MODIFICATION TECHNOLOGIES XI, 1998, : 814 - 825