Plasmonic performance, electrical and optical properties of titanium nitride nanostructured thin films for optoelectronic applications

TiN films with different thicknesses (17.9–102.8 nm) were prepared using rf magnetron sputtering to study the effect thickness on the plasmonic, electrical, and optical properties. X-ray diffraction revealed the amorphous-like structure for thinner films with thicknesses lower than 50.3 nm, whereas polycrystalline of face-centered cubic TiN structure was observed for thicker films. Scanning electron microscopy observations revealed rounded nano-crystallites morphology for TiN films. The EDAX depicted oxygen in the TiN films which attributed to the residual oxygen inside the sputtering chamber and to the partial surface oxidation resulted from the exposure to atmospheric air. As the thickness increased from 17.9 to 102.8 nm, the carrier concentration increases from 1.47 × 1022 to 3.51 × 1022 cm−3 and the carrier mobility increased from 0.091 to 0.489 cm2/V.s, which resulted in a resistivity decrease from 4.65 × 10–3 to 3.64 × 10–4 Ω cm. Two absorption bands around 250 and 1000 nm were observed. The band around 1000 nm was ascribed to the localized surface plasmon resonance (LSPR) and increased with increasing the film thickness. The optical band gap and refractive index values decreased monotonically with increasing the film thickness. It is also inferred that the thickness has a strong influence on the values of real and imaginary parts of the dielectric function. Applying various figures of merit indicated that the prepared TiN films are probably not practical for LSPR device fabrication however they are probably suitable for practical transformation optics and superlens device applications.