EPITAXIAL SINGLE-CRYSTAL ScAlN ON 4H-SiC FOR HIGH-VELOCITY, LOW-LOSS SAW DEVICES

被引:0
|
作者
Gokhale, Vikrant J. [1 ]
Downey, Brian P. [1 ]
Hardy, Matthew T. [1 ]
Jin, Eric N. [1 ]
Roussos, Jason A. [1 ]
Meyer, David J. [1 ]
机构
[1] US Naval Res Lab, Washington, DC 20375 USA
来源
2020 33RD IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS 2020) | 2020年
关键词
Epitaxial ScAlN; molecular beam epitaxy; SiC; SAW devices; propagation loss; power handling; ACOUSTIC-WAVE RESONATORS; PERFORMANCE;
D O I
10.1109/mems46641.2020.9056271
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This report presents some of the first experimental characterization of surface acoustic wave (SAW) devices using single-crystal ScAlN epitaxially grown on SiC. Due to the excellent wave guiding provided by the ScAlN/SiC heterostructure, SAW phase velocities greater than 12,000 m/s are measured, higher than comparable ScAlN SAW devices on other substrates. The phase velocity dispersion for measured devices compares well with simulated values. We observe up to k(2) = 0.52% even for very small thickness to wavelength ratios ( t/lambda < 0.2). We show that epitaxial ScAlN/SiC can achieve extremely low SAW propagation loss (alpha < 10(-2) dB/lambda), comparable to state-of-the-art piezoelectric/diamond SAW devices, and are linear at CW RF power levels up to approximate to 30 dBm (1W), with 1 dB gain compression at 34 dBm and an IIP3 of 45 dBm.
引用
收藏
页码:1262 / 1265
页数:4
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