Diffusive magnetoresistance and interlayer exchange coupling of the ferromagnet-semiconductor layered systems Fe/GaAs and Fe/Ge

被引：3
|
作者：
Perlov, A [1 ]
Popescu, V [1 ]
Ebert, H [1 ]
机构：
[1] Univ Munich, Dept Chem Phys, D-81377 Munich, Germany
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2004年 / 241卷 / 06期
关键词：
D O I：
10.1002/pssb.200302004
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report results on calculations of the electronic, magnetic and transport properties of Fe/GaAs and Fe/Ge multilayer systems. On the base of the generalized Bloch theorem we have calculated the electronic structure for a set of spin-spiral structures, which allows us to extract averaged interlayer exchange parameters and their dependence on the width of the semiconductor spacer. The dependence of the dc conductivity and magnetoresistance on the width of the semiconductor layer and the relative angle between the moments of adjacent FM-layers allowed us to model the dependence of the resistivity on a magnetic field. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1316 / 1323
页数：8
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