Mossbauer spectroscopy, interlayer coupling and magnetoresistance of irradiated Fe/Cr multilayers

被引:1
|
作者
Stobiecki, F
Kopcewicz, A
Jagielski, J
Szymanski, B
Urbaniak, M
Dubowik, J
Schmidt, M
Kalinowska, J
机构
[1] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland
[2] Inst Elect Mat Technol, PL-01919 Warsaw, Poland
[3] Andrzej Soltan Inst Nucl Studies, PL-05400 Otwock, Poland
关键词
magnetic multilayers; interlayer coupling; giant magneturesistance; Mossbauer spectroscopy; magnetic films and multilayers; magnetic measurements; irradiation; argon; electronic transport; nuclear resonances;
D O I
10.1016/j.jallcom.2004.01.069
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The influence of Ar-ion irradiation on the microstructure, interlayer coupling and magnetoresistance in Fe/Cr multilayers is studied. An increase of interface roughness of Fe/Cr multilayers caused by irradiation with 200 keV Ar ions and doses exceeding 5 x 10 (12) Ar/cm(2) is clearly seen in conversion electron Mossbauer spectroscopy (CEMS) measurements, while the small angle X-ray diffraction (SAXRD) technique hardly detects such changes in microstructure even at the higher ion doses. This subtle modification of the microstructure induces distinct changes in magnetization reversal (increase of the remanence magnetization, decrease of the saturation fields) and strongly decreases GMR effect with increasing irradiation dose. The most prominent changes are observed for the samples with a small thickness of Cr layers. The increasing immunity of GMR effect to ion irradiation with the increasing thickness of Cr layers as well as correlation between changes in GMR and antiferromagnetically coupled sample fraction suggest that the main effect responsible for the decrease of GMR is caused by the pinholes creation. For doses exceeding 2 x 10(13) Ar/cm(2) the volume intermixing seems to be a dominating mechanism responsible for further degradation of GMR and antiferromagnetic interlayer exchange coupling. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:174 / 178
页数:5
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